Improvement on interfacial quality of Ge MOS Capacitor using RIE O2 plasma treatment

Title
Improvement on interfacial quality of Ge MOS Capacitor using RIE O2 plasma treatment
Authors
김형준김상현이수빈한재훈김성광임형락심재필주병권
Issue Date
2018-02
Publisher
한국반도체학술대회
URI
http://pubs.kist.re.kr/handle/201004/61504
Appears in Collections:
KIST Publication > Conference Paper
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