Direct Electrical Characteristics of GaN Nanowire Field Effect Transistor (FET) without Assistance of E-beam Lithography (EBL)

Title
Direct Electrical Characteristics of GaN Nanowire Field Effect Transistor (FET) without Assistance of E-beam Lithography (EBL)
Authors
Sang-Kwon Lee성한규Ki Chul ChoiNam Kyu Cho최헌진Eun-Kyung SuhKee-Suk Nahm
Keywords
nanowires; GaN; Field Effect Transistor (FET); E-beam Lithography
Issue Date
2006-10
Publisher
Materials science forum
Citation
VOL 527-529, 1549-1552
URI
http://pubs.kist.re.kr/handle/201004/30213
ISSN
0255-5476
Appears in Collections:
KIST Publication > Article
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